Thermal-Diffusive Processes of an Electron-Hole Non-Local Semiconductor Model with Variable Thermal Conductivity and Hall Current Effect

نویسندگان

چکیده

In this work, a novel model is presented that describes thermal diffusion processes through non-local semiconductor materials. The material under study subjected to the influence of strong magnetic field, which creates Hall current. Interference between excited electrons and holes had been exposed temperature was present, conductivity depending on changes in graduated were accounted for. governing equations are written dimensionless form one dimension (1D) where taken as function electronic elastic deformation (ED ED) processes. Laplace transforms with initial conditions used convert partial differential arrive at exact formulas solutions. To obtain linear solutions, some boundary free surface used. Using numerical methods inverse transforms, complete solutions physical quantities obtained. further understand how various variables (thermal memory, variable conductivity, current) affect semiconductor, fields simulated, graphically depicted, discussed herein.

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ژورنال

عنوان ژورنال: Mathematics

سال: 2023

ISSN: ['2227-7390']

DOI: https://doi.org/10.3390/math11020264